TSM130NB06CR RLG
TSM130NB06CR RLG
Part Number TSM130NB06CR RLG
Description MOSFET SINGLE N-CHANNEL TRENCH
Package / Case 8-PowerTDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6)
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TSM130NB06CR RLG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM130NB06CR
Standard Package 2500
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 30V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN
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